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  1 publication date: december 2003 sjj00002bed composite transistors up0421x series silicon npn epitaxial planar type for switching/digital circuits features ? two elements incorporated into one package (transistors with built-in resistor) ? reduction of the mounting area and assembly cost by one half resistance by part number marking symbol (r 1 )(r 2 ) ? up04210 8z 47 k ?? ? UP04211 9v 10 k ? 10 k ? ? up04213 8s 47 k ? 47 k ? ? up04214 br 10 k ? 47 k ? ? up04215 8t 10 k ?? ? up04216 8u 4.7 k ?? absolute maximum ratings t a = 25 c unit : mm 1 6 tr2 tr1 3 4 5 2 r 1 r 2 r 1 r 2 (0.30) 0.10 0.02 654 123 5? 5? 0.20 +0.05 ?.02 1.60 0.05 0.55 0.05 0.10 max. 0 to 0.02 (0.20) 1.60 0.05 display at no.1 lead 1.20 0.05 (0.20) 1.00 0.05 (0.50)(0.50) parameter symbol rating unit collector-base voltage (emitter open) v cbo 50 v collector-emitter voltage (base open) v ceo 50 v collector current i c 100 ma total power dissipation p t 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c 1: emitter (tr1) 4: emitter (tr2) 2: base (tr1) 5: base (tr2) 3: collector (tr2) 6: collector (tr1) ssmini6-f1 package internal connection
2 sjj00002bed up0421x series p t ? t a 0 0 160 40 120 80 150 25 50 75 100 125 total power dissipation p t ( mw ) ambient temperature t a ( c ) parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 50 v, i b = 0 0.5 a emitter-base up04210/4215/4216 i ebo v eb = 6 v, i c = 0 0.01 ma cutoff current UP04211 0.5 (collector open) up04213 0.1 up04214 0.2 forward current up04210/4215/4216 h fe v ce = 10 v, i c = 5 ma 160 460 ? transfer ratio UP04211 35 up04213/4214 80 collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 2.5 v, r l = 1 k ? 0.2 v up04213 v cc = 5 v, v b = 3.5 v, r l = 1 k ? input up04210/4213 r 1 ? 30% 47 + 30% k ? resistance UP04211/4214/4215 10 up04216 4.7 resistance UP04211/4213 r 1 / r 2 0.8 1.0 1.2 ? ratio up04214 0.17 0.21 0.25 transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz electrical characteristics t a = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. common characteristics chart
up0421x series 3 sjj00002bed i c ? v ce v ce(sat) ? i c h fe ? i c i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c 012 210 48 6 0 40 80 120 i b = 1.0 ma 0.2 ma 0.4 ma 0.8 ma 0.7 ma 0.6 ma t a = 25 c 0.9 ma 0.5 ma 0.3 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 0.1 10 1 10 100 0.1 1 i c / i b = 10 t a = 75 c 25 c ? 25?c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 100 200 0.1 1 10 100 300 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 0 2 1 v o = 5 v t a = 25 c 0.1 1 10 output current i o (ma) input voltage v in (v) 0.1 1 100 10 100 v o = 0.2 v t a = 25 c 1 10 input voltage v in (v) output current i o (ma) 012 210 48 6 0 40 80 120 i b = 1.0 ma 0.2 ma 0.4 ma 0.8 ma 0.7 ma 0.6 ma t a = 25 c 0.9 ma 0.5 ma 0.3 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 1 0.1 1 10 100 1 000 i c / i b = 10 t a = 75 c 25 c ? 25?c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 100 200 1 10 100 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) characteristics charts of up04210 characteristics charts of UP04211
4 sjj00002bed up0421x series c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o 02030 10 0.1 10 1 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.01 1.0 0.1 1 10 100 2.0 1.8 1.6 1.4 1.2 v o = 5 v t a = 25 c output current i o (ma) input voltage v in (v) 0.1 0.1 1 10 1 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) 0 012 210 48 6 t a = 25 c 120 80 40 i b = 1.0 ma 0.1 ma 0.2 ma 0.3 ma 0.4 ma 0.5 ma 0.6 ma 0.7 ma 0.9 ma 0.8 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 0.1 10 1 10 100 i c / i b = 10 0.1 1 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 0.1 1 10 100 80 160 240 320 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 1 0 102030 10 40 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 04812 v o = 5 v t a = 25 c 0.1 1 10 100 output current i o (ma) input voltage v in (v) 0.1 0.1 100 1 10 100 v o = 0.2 v t a = 25 c 1 10 input voltage v in (v) output current i o (ma) characteristics charts of up04213
up0421x series 5 sjj00002bed i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o i c ? v ce v ce(sat) ? i c h fe ? i c 012 210 48 6 0 40 80 120 i b = 1.0 ma 0.2 ma 0.4 ma 0.5 ma 0.8 ma 0.7 ma 0.6 ma t a = 25 c 0.9 ma 0.3 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 1 0.1 1 10 100 1 000 i c / i b = 10 t a = 75 c 25 c ? 25?c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 100 200 0.1 1 10 100 300 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 020 10 1 10 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.01 0.1 1 10 100 012 v o = 5 v t a = 25 c output current i o (ma) input voltage v in (v) 0.1 0.1 1 10 1 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) 012 210 48 6 0 40 80 120 i b = 1.0 ma 0.2 ma 0.4 ma 0.8 ma 0.7 ma 0.6 ma t a = 25 c 0.9 ma 0.5 ma 0.3 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 1 0.1 1 10 100 1 000 i c / i b = 10 t a = 75 c 25 c ? 25?c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 1 10 100 1 000 v ce = 10 v 100 200 300 400 t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) characteristics charts of up04215 characteristics charts of up04214
6 sjj00002bed up0421x series i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o c ob ? v cb i o ? v in v in ? i o 010 30 20 1 10 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 1 100 012 v o = 5 v t a = 25 c 10 output current i o (ma) input voltage v in (v) 0.1 1 1 10 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) 012 210 48 6 0 40 80 120 i b = 1.0 ma 0.2 ma 0.4 ma 0.8 ma 0.7 ma 0.6 ma t a = 25 c 0.9 ma 0.5 ma 0.3 ma 0.1 ma collector-emitter voltage v ce (v) collector current i c (ma) 0.01 0.1 0.1 1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25?c collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0 100 200 300 0.1 1 10 100 1 000 v ce = 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c (ma) 02030 10 0.1 10 1 f = 1 mhz t a = 25 c collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) 0.4 0.1 100 1.2 0.8 v o = 5 v t a = 25 c 1 10 output current i o (ma) input voltage v in (v) 0.1 0.1 1 10 1 10 100 v o = 0.2 v t a = 25 c input voltage v in (v) output current i o (ma) characteristics charts of up04216
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep


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